2N2484 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN general purpose transistor

NPN 2N2484
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N2484 are a silicon planar epitaxial NPN transistors mounted in TO-18 metal package.
They are intended for use in high-performance, low-noise amplifier circuits from audio to high-frequency.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_D
T_J
T_Stg
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
@ T_amb = 25°
@ T_case= 25°
@ T_case<100°
Storage Temperature range
Value
60
60
6
50
0.36
1.2
0.68
200
-65 to +200
Unit
V
V
V
mA
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
R_thJ-a
R_thJ-c
Ratings
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
Value
486
146
Unit
°C/ W
°C/ W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I_CBO
I_CBO
I_EBO
V_CEO (*)
V_CBO
V_EBO
Ratings
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Test Condition(s)
V_CB=45 V, I_E=0
V_CB=45 V, I_E=0, T_j=150°C
V_BE=5.0 V, I_C=0
I_C=10 mA, I_B=0
I_C=10 µA, I_E=0
I_E=10 µA, I_C=0
Min Typ Mx Unit
- - 10 nA
- - 10 µA
- - 10 nA
60 - -
V
60 - -
V
6- -
V
COMSET SEMICONDUCTORS
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