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2N2327 Datasheet, PDF (1/3 Pages) Comset Semiconductor – SILICON THYRISTORS
2N2327 thur 2N2329
SILICON THYRISTORS
All-diffused PNPN thyristors designed for grating operation in mA/µA signal
or detection circuits
Compliance to RoHS.
MAXIMUM RATINGS (*)
TJ=125°C unless otherwise noted, RGK=1000Ω
Symbol
Ratings
VRSM(REP)
VRSM(NON-
REP)
IT(RMS)
ITSM
PGM
PG(AV)
IGM
VGFM
VGRM
TJ
TSTG
Peak reverse blocking voltage (1)
Non-repetitive peak blocking reverse
voltage (t<5.0 ms)
Forward Current RMS
(all conduction angles)
Peak Surge Current
(One-Half Cycle, 60Hz)
No Repetition Until Thermal Equilibrium
is Restored.
Peak Gate Power – Forward
Average Gate Power - Forward
Peak Gate Current – Forward
Peak Gate Voltage - Forward
Peak Gate Voltage - Reverse
Operating Junction Temperature Range
Storage Temperature Range
2N2327 2N2328 2N2329 Unit
250
300
400
V
350
400
500
V
1.6
A
15
A
0.1
W
0.01
W
0.1
A
6.0
V
6.0
V
-65 to +125
°C
-65 to +150
12/11/2012
COMSET SEMICONDUCTORS
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