2N1613 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN medium power transistor

NPN 2N1613 – 2N1711
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector
connected to the case .
They are designed for use in high-performance amplifier, oscillator and switching circuits.
The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CBO
V_CER
V_EBO
I_C
I_CM
P_D
T_J
T_Stg
Ratings
Collector-Base Voltage
Collector-Emitter Voltage (R_BE = 10Ω)
Emitter-Base Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
@ T_case= 25°
@ T_case= 100°
@ T_amb= 25°
Storage Temperature range
THERMAL CHARACTERISTICS
Symbol
R_thJ-c
R_thJ-amb
Ratings
Thermal Resistance, Junction-case
Thermal Resistance, Junction-ambient
Value
75
50
7
0.5
1
3
1.7
0.8
200
-65 to +200
Unit
V
V
V
A
A
Watts
Watts
Watts
°C
°C
Value
58
219
Unit
°C/ W
°C/ W
COMSET SEMICONDUCTORS
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