2N1595 Datasheet, PDF (1/2 Pages) Comset Semiconductor – SILICON THYRISTOR

2N1595 thru 2N1599
SILICON THYRISTOR
Industrial-type, low-current silicon controlled rectifiers
in a three-lead package ideal for printed-circuit applications.
Current handling capability of 1.6 amperes at junction temperetures to 125°C
MAXIMUM RATINGS (*)
T_J=125°C unless otherwise noted
Symbol
V_RSM(REP)
I_T(RMS)
I_TSM
P_GM
P_G(AV)
I_GM
V_GFM
V_GRM
T_J
T_STG
Ratings
2N1595 2N1596 2N1597 2N1598 2N1599
Peak reverse blocking voltage *
50
Forward Current RMS (all conduction
angles)
Peak Surge Current
(One Cycle, 60Hz, T_J=-65 to +125°C)
Peak Gate Power – Forward
100 200 300 400 V
1.6
Amp
15
Amp
0.1
W
Average Gate Power - Forward
0.01
W
Peak Gate Current – Forward
0.1
Amp
Peak Gate Voltage - Forward
10
V
Peak Gate Voltage - Reverse
10
V
Operating Junction Temperature
Range
-65 to +125
°C
Storage Temperature Range
-65 to +150
ELECTRICAL CHARACTERISTICS
T_J=25°C unless otherwise noted, R_GK=1000Ω
Symbol
V_DRM
I_RRM
Ratings
2N1595 2N1596 2N1597 2N1598 2N1599
Peak Forward Blocking
Voltage *
Min : 50
Peak Reverse Blocking Current
(Rated V_DRM, T_J =125°C)
100 200 300
Max : 1.0
400 V
mA
COMSET SEMICONDUCTORS
1/2