MMBT2222LT1_06 Datasheet, PDF (3/6 Pages) Comchip Technology – General Purpose Transistors NPN Silicon

MMBT2222LT1, MMBT2222ALT1
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
SMALL− SIGNAL CHARACTERISTICS
Collector Base Time Constant
(I_E = 20 mAdc, V_CB = 20 Vdc, f = 31.8 MHz)
MMBT2222A
Noise Figure
(I_C = 100 mAdc, V_CE = 10 Vdc, R_S = 1.0 kW, f = 1.0 kHz)
MMBT2222A
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time
Rise Time
(V_CC = 30 Vdc, V_BE(off) = − 0.5 Vdc,
I_C = 150 mAdc, I_B1 = 15 mAdc)
Storage Time
Fall Time
(V_CC = 30 Vdc, I_C = 150 mAdc,
I_B1 = I_B2 = 15 mAdc)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. f_T is defined as the frequency at which |h_fe| extrapolates to unity.
Symbol
rb, C_c
NF
t_d
t_r
t_s
t_f
Min
Max
Unit
ps
−
150
dB
−
4.0
−
10
ns
−
25
−
225
ns
−
60
+16 V
0
−2 V
SWITCHING TIME EQUIVALENT TEST CIRCUITS
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1 kW
< 2 ns
+30 V
200
C_S* < 10 pF
+16 V
0
−14 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
< 20 ns
1k
1N914
+30 V
200
C_S* < 10 pF
Scope rise time < 4 ns
−4 V
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
1000
700
500
300
200
100
70
50
30
20
10
0.1
0.2 0.3 0.5 0.7 1.0
T_J = 125°C
25°C
−55°C
V_CE = 1.0 V
V_CE = 10 V
2.0 3.0 5.0 7.0 10
20 30
I_C, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
50 70 100
200 300 500 700 1.0 k
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