MMBTA44-G Datasheet, PDF (2/5 Pages) Comchip Technology – General Purpose Transistor

General Purpose Transistor
Electrical Characteristics (Ta=25°C, unless otherwise specified)
Parameter
Collector-base breakdown voltage
Conditions
IC=100μA, IE=0
Symbol
V(BR)CBO
Collector-emitter breakdown voltage
IC=1mA, IB=0
V(BR)CEO*
Emitter-base breakdown voltage
IE=10μA, IC=0
V(BR)EBO
Collector cut-off current
VCB=400V, IE=0
ICBO
Emitter cut-off current
VEB=4V, IC=0
IEBO
VCE=10V, IC=1mA
hFE(1)*
DC current gain
VCE=10V, IC=10mA
VCE=10V, IC=50mA
hFE(2)*
hFE(3)*
VCE=10V, IC=100mA
hFE(4)*
IC=1mA, IB=0.1mA
VCE(sat)1*
Collector-emitter saturation voltage
IC=10mA, IB=1mA
VCE(sat)2*
IC=50mA, IB=5mA
VCE(sat)3*
Base-emitter saturation voltage
IC=10mA, IB=1mA
VBE(sat)*
Collector output capacitance
VCB=20V, IE=0, f=1MHZ
Cob
Emitter input capacitance
VEB=0.5V, IC=0, f=1MHZ
Cib
*Pulse test: pulse width ≤300µs, duty cycle≤2.0%
Min
400
400
6
40
50
45
40
Max
0.1
0.1
200
Unit
V
V
V
μA
μA
0.4
V
0.5
V
0.75
V
0.75
V
7
pF
130
pF
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR53
Comchip Technology CO., LTD.
REV:A
Page 2