MMBT2907A-G Datasheet, PDF (2/4 Pages) Comchip Technology – GENERAL PURPOSE TRANSISTORS

General Purpose Transistor
SMD Diodes Specialist
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Parameter
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Base cut-off current
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
* Pulse test: tp≤300µS, δ≤0.02
Conditions
IC =10μA , IE=0
IC =10mA , IB=0
IE =10μA , IC=0
VCB=-50V , IE=0
VCE=-30V , VEB=-0.5V
VCE=-30V , VBE=-0.5V
VCE=-10V , IC=-0.1mA
VCE=-10V , IC=-1mA
VCE=-10V , IC=-10mA
VCE=-10V , IC=-150mA
VCE=-10V , IC=-500mA
IC=-150mA , IB=-15mA
IC=-500mA , IB=-50mA
IC=-150mA , IB=-15mA
IC=-500mA , IB=-50mA
VCE=-20V , IC=-50mA
F=100MHz
VCE=-30V , IC=-150mA
IB1=IB2=-15mA
VCE=-6V , IC=-150mA
IB1=IB2=-15mA
Symbol Min
VCBO
-60
VCEO*
-60
VEBO
-5
ICBO
IB
ICEX
hFE(1)*
hFE(2)*
hFE(3)*
hFE(4)*
hFE(5)*
V C E ( S AT ) *
75
100
100
100
50
V C E ( S AT ) *
V B E ( S AT ) *
V B E ( S AT ) *
Max Unit
V
V
V
-20
nA
-50
nA
-50
nA
300
-0.4
V
-1.6
V
-1.3
V
-2.6
V
fT
200
Mhz
td
10
nS
tr
40
nS
ts
80
nS
tf
30
nS
QW-BTR03
REV:A
Page 2