MMBT2222A-HF Datasheet, PDF (2/6 Pages) Comchip Technology – Small Signal Transistor

Small Signal Transistor
Electrical Characteristics (@TA=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Delay time (see fig.1)
Rise time (see fig.1)
Storage time (see fig.2)
Fall time (see fig.2)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
td
tr
ts
tf
IC=10μA, IE=0
IC=10mA, IB=0
IE=10μA, IC=0
VCB=60V, IE=0
VCE=30V, VBE(off)=3V
VEB=3V, IC=0
VCE=10V, IC=150mA
VCE=10V, IC=0.1mA
VCE=10V, IC=500mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=20V, IC=20mA
f=100MHz
VCC=30V, VBE(off)=-0.5V
IC=150mA, IB1=15mA
VCC=30V, IC=150mA
IB1=-IB2=15mA
Notes:
1. Pulse test: Pulse Width ≤300μs, Duty Cycle ≤ 2.0%.
Min.
75
40
6
100
40
42
300
Max.
0.01
0.01
0.1
300
Units
V
V
V
μA
μA
μA
0.3
V
1
1.2
V
2.0
MHz
10
nS
25
nS
225
nS
60
nS
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR08
Comchip Technology CO., LTD.
REV:A
Page 2