EF1A Datasheet, PDF (2/2 Pages) Comchip Technology – Efficient Fast Recovery Rectifier

Efficient Fast Recovery Rectifier
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (EF1A Thru EF1J)
Fig. 1 - Reverse Characteristics
100
Tj=125 C
10
Fig.2 - Forward Characteristics
10
EF1A-EF1D
1.0
EF1G
Tj=75 C
1.0
Tj=25 C
0.1
0. 01
0 15 30 45 60 75 90 105 120 135 150
Percent of Rated Peak Reverse Voltage (%)
0.1
EF1J
0.01
Tj=25 C
Pulse width 300uS
4% duty cycle
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Forward Voltage (V)
Fig. 3 - Junction Capacitance
35
30
Tj=25 C
25
f=1MHz and applied
4VDC reverse voltage
20
EF1A-EF1D
15
10 _EF1G-EF1J
5
0
0.01
0.1
1.0
10
100
Reverse Voltage (V)
Fig. 4 - Non Repetitive Forward
Surge Current
50
8.3mS Single Half Sine
Wave JEDEC methode
40
30
Tj=25 C
20
10
0
1
5 10
50 1 00
Number of Cycles at 60Hz
Fig. 5 - Test Circuit Dai gram and Reverse Recovery Time Characteristics
50W
NONINDUCTIVE
10W
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
()
D.U.T.
1W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
()
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
trr
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1cm
SET TIME BASE FOR
50 / 10ns / cm
Fig. 6 - Current Derating Curve
2.8
2.4
2.0
1.6
1.2
Single Phase
0.8
Half Wave 60Hz
0.4
00
25 50 75 100 125 150 175
Ambient Temperature ( C)
MDS0312011A
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