CSFM101-G Datasheet, PDF (2/2 Pages) Comchip Technology – SMD Super Fast Recovery Rectifiers

SMD Super Fast Recovery Rectifiers
Rating and Characteristic Curves (CSFM101-G Thru. CSFM105-G)
COMCHIP
SMD Diodes Specialist
Fig.1 Reverse Characteristics
1000
TJ=125^OC
100
TJ=75^OC
10
1
TJ=25^OC
0.1
0 20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage (%)
Fig.2 Forward Characteristics
10
CSFM101-G~103-G
1
CSFM104-G
CSFM105-G
0.1
0 .0 1
0 .0 0 1
0
TJ=25^OC
Pulse width 300μS
4% duty cycle
0.4
0.8
1.2
1.6
2.0
VF, Forward Voltage (V)
Fig.3 Junction Capacitance
14
TJ=25^OC
f=1MHz
12
Vsig=50mVp-p
10
8
6
4
2
0
0.1
1
10
100
VR, Reverse Voltage (V)
Fig.4 Current Derating Curve
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
20 40 60 80 100 120 140 160
TA, Ambient Temperature (^OC)
Fig.5 Non-repetitive Forward
Surge Current
30
TJ=25^OC
8.3ms single half sine
wave, JEDEC method
25
20
15
10
Fig.6 Test Circuit Diagram and Reverse Recovery Time Characteristics
50W
NONINDUCTIVE
10W
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
()
D.U.T.
1W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
()
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
trr
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5
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
0
1
10
100
Number of Cycles at 60Hz
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
QW-BS005
Comchip Technology CO., LTD.
REV:B
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