CPDZ5V0-HF Datasheet, PDF (2/4 Pages) Comchip Technology – SMD ESD Protection Diode

SMD ESD Protection Diode
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Working peak reverse voltage
Reverse leakage current
Breakdown voltage
VRWM = 5V
IT = 1mA
(1)
VRWM
IR
V(BR)
Clamping voltage
Junction capacitance
IPP = 4 A
VR = 0V, f = 1MHz
VC ⁽²⁾
CJ
Notes:
(1) Other voltage available upon request.
(2) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5
Min
5.6
Typ Max Unit
5
V
1
µA
8
V
13
V
3
pF
RATING AND CHARACTERISTIC CURVES (CPDZ5V0-HF)
Fig. 1 - 8/20us Peak Pulse Current
Waveform Acc. IEC 61000-4-5
120%
100%
Ta=25°C
Peak Valur Ipp
Test Waveform
parameters
tf=8us
td=20us
80%
e ^-t
60%
40%
20%
td= t _Ipp/2
0%
0
5
10
15
20
25
30
Time, (us)
Fig. 2 - Capacitance Characteristics
4
TA=25°C
f=1MHz
3
2
1
0
0
1
2
3
4
5
Reverse Voltage, ( V )
Fig.3 - Clamping Voltage Vs.
Peak Pulse Current
25
TA=25°C
TP=8/20us
12
9
6
3
1
1.5 2.0 2.5
3.0 3.5 4.0
Peak Pulse Current, IPP (A)
QW-JP045
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Comchip Technology CO., LTD.
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