CPDVR085V0H-HF Datasheet, PDF (2/5 Pages) Comchip Technology – SMD ESD Protection Diode

SMD ESD Protection Diode
Comchip
SMD Diode Specialist
Maximum Rating and Electrical Characteristics
O
(at TA=25 C unless otherwise noted)
Parameter
Diode breakdown voltage
Conditions
IR = 1mA
Symbol Min ^Typ Max Unit
VBD
5.5 7.0
V
Leakage current
VR = 5V
IL
1.0
uA
Junction capacitance
ESD capability
Clamping Voltage
Peak Pulse Power
VR =0V,f =1MHz
IEC 61000-4-2(air)
IEC 61000-4-2(contact)
IPP = 1 A, tp=8/20us
IPP = 7 A, tp=8/20us
TP=8/20us
CT
ESD
ESD
Vc
Vc
PPP
20
pF
30
kV
30
kV
11
V
20
V
140
W
Operation temperature
Storage temperature
Tj
TSTG
-55
125
°C
150 °C
QW-G7051
Comchip Technology CO., LTD.
REV: A
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