CPDVR083V3U_15 Datasheet, PDF (2/5 Pages) Comchip Technology – SMD ESD Protection Diode

SMD ESD Protection Diode
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Peak pulse power ( tp = 8/20 us)
Peak pulse current ( tp = 8/20 us)
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
Operating temperature
Storage temperature
Symbol
PPP
IPP
ESD
TJ
TSTG
Value
40
5
±20
±15
-55 to +125
-55 to +125
Unit
W
A
kV
°C
°C
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Reverse stand-off voltage
Punch-through voltage
Snap-back voltage
Leakage current
Clamping voltage
Reverse clamping voltage
Junction capacitance
Conditions
IPT = 2uA
ISB = 50mA
VR = 3.3V
IPP = 1 A, Tp=8/20us,
Any Channel Pin to Ground
IPP = 5 A, Tp=8/20us,
Any Channel Pin to Ground
IPPR = 1 A, Tp=8/20us,
Ground to Any Channel Pin
VR = 0 V, f = 1MHz
Any Channel Pin to Ground
VR = 3.3 V, f = 1MHz
Any Channel Pin to Ground
Symbol _Min Typ _{Max Unit}
VRWM
3.3
V
VPT
3.5
V
VSB
2.8
V
IL
0.05 0.5 uA
VC
5.5
V
VC
8.0
V
VCR
2.4
V
Cj
25
30
pF
Cj
14
pF
QW-BP027
Comchip Technology CO., LTD.
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