CPDVR083V3U-HF Datasheet, PDF (2/5 Pages) Comchip Technology – SMD ESD Protection Diode

SMD ESD Protection Diode
SMD Diodes Specialist
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Peak pulse power ( tp = 8/20 us)
Peak pulse current ( tp = 8/20 us)
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
Operating temperature
Storage temperature
Symbol
PPP
IPP
VESD
Tj
TSTG
Value
40
5
±20
±15
-55 to +125
-55 to +125
Unit
W
A
kV
O
C
O
C
Electrical Characteristics (at TA=25^OC unless otherwise noted)
Parameter
Reverse stand-off voltage
Punch-through voltage
Snap-back voltage
Reverse leakage current
Clamping voltage
Reverse clamping voltage
Junction capacitance
Conditions
IPT = 2uA
ISB = 50mA
VRWM = 3.3V
IPP = 1 A, tp=8/20us,
Any Channel Pin to Ground
IPP = 5 A, tp=8/20us,
Any Channel Pin to Ground
IPPR = 1 A, tp=8/20us,
Ground to Any Channel Pin
VR = 0 V, f = 1MHz
Any Channel Pin to Ground
VR = 3.3 V, f = 1MHz
Any Channel Pin to Ground
Symbol _Min Typ _{Max Unit}
VRWM
3.3
V
VPT
3.5
V
VSB
2.8
V
IR
0.05 0.5 uA
VC
5.5
V
VC
8.0
V
VCR
2.4
V
Cj
25 30
pF
Cj
14
pF
QW-G7016
Comchip Technology CO., LTD.
REV:A
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