CPDT-4V0UA-HF Datasheet, PDF (2/3 Pages) Comchip Technology – Dual ESD Protection Diode

Dual ESD Protection Diode
Electrical Characteristics (at TA=25°C unless otherwise specified)
Part No.
Rated
Stand-off
Voltage
VRM
(V)
CPDT-4V0UA-HF
4.0
Max.
Leakage
Current
@ VRM
IRM
(μA)
20.0
CPDT-5V0UA-HF
5.0
5.0
CPDT-8V0UA-HF
8.0
5.0
CPDT-12VUA-HF
12.0
1.0
CPDT-15VUA-HF
15.0
1.0
NOTES：1. 8/20 waveform used. (see fig1.)
Max.
Breakdown
Voltage
@ 1mA
VBR
(V)
4.0
6.0
8.5
13.3
16.7
Max.
Clamping Voltage
(Note 1)
@ 1A
VC
(V)
@ 5A
VC
(V)
8.5
10.5
9.8
12.5
13.4
15.0
19.0
28.0
24
39.0
Max.
Pulse Peak
Current
Max.
Capacitance
@tp=8/20us
IPPM
(A)
@ 0V, 1MHz
C
(pF)
17
300
17
220
15
190
12
90
10
60
RATING AND CHARACTERISTIC CURVES (CPDT-4V0UA-HF Thru. CPDT-15UA-HF)
Fig.1 - Pulse Waveform
Fig.2 - Power Derating
120%
100%
80%
60%
40%
20%
Ta=25°C
Peak Valur Ipp
Test Waveform
parameters
tf=8us
td=20us
e ^-t
td= t
Ipp/2
100
80
Peak Pluse Power
8/20us
60
40
Average Power
20
0%
0
5
10
15
20
25
30
Time, T (us)
0
0
25
50
75
100 125
150
Lead Temperature, TL (°C)
Fig.3 - Peak Pulse Power vs. Pulse Time
10,000
1,000
300W, 8/20us Waveform
100
10
0.1
1
10
100
Pulse Duration, Td (us)
1,000
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QW-JP036
Comchip Technology CO., LTD.
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