CPDA10R5V0SP-HF Datasheet, PDF (2/5 Pages) Comchip Technology – SMD ESD Protection Diode

SMD ESD Protection Diode
Maximum Rating (at TA=25°C unless otherwise noted)
Parameter
Symbol
Peak pulse power ( tp = 8/20 us)
PPP
Peak pulse current ( tp = 8/20 us)
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
Operating temperature
IPP
ESD
TJ
Storage temperature
TSTG
Value
60
3
±15
±14
-55 to +125
-55 to +150
Unit
W
A
kV
°C
°C
Electrical Characteristics (at TA=25 °C unless otherwise noted)
Parameter
Conditions ^Symbol
Reverse stand-off voltage
VRWM
Breakdown voltage
IR = 1mA
VBR
Leakage current
Clamping voltage
Junction capacitance
VR = 5.0V
IL
IPP = ±1A, Tp = 8/20us
Any Channel Pin to Ground
VC
VR = 0 V, f = 1MHz
Any Channel Pin to Ground
Cj
Min
6.0
Typ
Max Unit
5.0
V
V
50
nA
12
V
0.15
0.25
pF
Company reserves the right to improve product design , functions and reliability without notice.
QW-G7079
Comchip Technology CO., LTD.
REV:A
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