CEFB101-G_12 Datasheet, PDF (2/2 Pages) Comchip Technology – SMD Efficient Fast Recovery Rectifiers

SMD Efficient Fast Recovery Rectifiers
RATING AND CHARACTERISTIC CURVES (CEFB101-G thru CEFB105-G)
Fig.1 Reverse Characteristics
100
TJ=125 ^OC
10
TJ=75 ^OC
1
0.1
TJ=25 ^OC
0.01
0
30
60
90
120
150
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Junction Capacitance
35
TJ=25 ^OC
f=1MHz and applied
30
4VDC reverse voltage
25
20
CEFB101-G~103-G
15
CEFB104-G~105-G
10
5
0
0.01
0.1
1
10
100
Reverse Voltage (V)
Fig.2 Forward Characteristics
10
CEFB101-G~103-G
1
CEFB104-G
CEFB105-G
0.1
0.01
0.001
0
TJ=25 ^OC
Pulse width 300μS
4% duty cycle
0.4
0.8
1.2
1.6
2.0
Forward Voltage (V)
Fig.4 Non-repetitive Forward Surge Current
50
TJ=25 ^OC
8.3ms single half sine
wave, JEDEC method
40
30
20
10
0
1
10
100
Number of Cycles at 60Hz
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
50Ω
NONINDUCTIVE
10Ω
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
(-)
D.U.T.
1Ω
NON-
INDUCTIVE
OSCILLLISCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
trr
1cm
Set time base for
50 / 10nS / cm
Fig.6 Current Derating Curve
2.8
2.4
2.0
1.6
1.2
Single phase
0.8
Half wave 60Hz
0.4
0
0 25 50 75 100 125 150 175
Ambient Temperature ( ^OC)
QW-BE003
Comchip Technology CO., LTD.
REV:A
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