BC856-HF Datasheet, PDF (2/6 Pages) Comchip Technology – General Purpose Transistor

General Purpose Transistor
Electrical Characteristics (TA= 25°C unless otherwise specified)
Parameter
Symbol Test Conditions
MIN
BC856
-80
Collector-Base breakdown voltage
BC857 V(BR)CBO IC = -10μA , IE=0
-50
BC858
-30
BC856
-65
Collector-Emitter breakdown voltage
BC857 V(BR)CEO IC = -10mA , IB=0
-45
BC858
-30
Emitter-Base breakdown voltage
V(BR)EBO IE = -1μA , IC=0
-5
TYP
MAX Unit
V
V
V
Collector cut-off current
ICBO VCB= -30V , IE=0
Emitter cut-off current
IEBO
VEB= -5V , IC=0
DC current gain
BC856A ,857A ,858A
125
BC856B ,857B ,858B hFE VCE = -5V , IC= -2.2mA
220
BC857C ,858C
420
Collector-Emitter saturation voltage
IC =-100mA , IB=-5mA
VCE(sat)
IC =-10mA , IB=-0.5mA
Base-Emitter saturation voltage
VBE(sat)
IC =-10mA , IB=-0.5mA
IC =-100mA , IB=-5mA
Base-Emitter voltage
Collector capacitance
Transition frequency
Transition frequency
IC =-2mA , VCE=-5V
-0.6
VBE(on)
IC =-10mA , VCE=-5V
VCB =-10V , IE=Ie=0
CC
f=1MHZ
IC=-200uA,VCE=-5V
F
RS=2kΩ,f=1kHz,
B=200Hz
VCE=-5V, IC=-10mA
fT
100
f=100MHZ
-1
-0.7
-0.85
-0.65
4.5
-15
nA
-0.1
µA
250
475
800
-0.65
V
-0.3
V
-0.75
V
-0.82
pF
2
10
dB
MHZ
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR16
Comchip Technology CO., LTD.
REV:A
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