Z4GP206L-HF Datasheet, PDF (1/4 Pages) Comchip Technology – Lead less chip form, no lead damage, Low power loss, High efficiency

Low VF SMD Bridge Rectifiers
Z4GP206L-HF Thru. Z4GP210L-HF
Reverse Voltage: 600 to 1000 Volts
Forward Current: 2.0 A
RoHS Device
Halogen free
ABS(Z4)
Features
- Intermal structure with GPRC
(Glass passivated rectifier chip) inside.
- Lead less chip form, no lead damage.
- Low power loss, High efficiency.
- High current capability.
- Plastic package has Underwriters Laboratory
Flammability Classification 94V-0 .
Mechanical data
- Case: Packed with FRP substrate and epoxy underfilled.
- Terminals: Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, method 2026.
- Polarity: Laser marking symbols
- Weight: 0.11 gram
0.213(5.40)
0.205(5.20)
0.132(3.35)
0.128(3.25)
-
0.232(5.90)
0.224(5.70)
~
0.037(0.95)
0.033(0.85)
+
~
0.047(1.20)
0.039(1.00)
R0.25±0.05
0.053(1.35)
0.041(1.05)
Dimensions in inches and (millimeter)
Circuit Diagram
4
1
-
+
Abolute Maximum Rating (at TA=25°C unless otherwise noted)
~
~
3
2
Parameter
Symbol
Repetitive Peak Reverse Voltage
VRRM
Average Forward Current
I(AV)
Peak Forward Surge Current, 8.3mS single
half sine-wave, superimposed on rated load IFSM
(JEDEC Method)
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
Z4GP206L-HF
600
Z4GP208L-HF
800
2.0
60
-55 to +175
-55 to +175
Z4GP210L-HF
1000
Unit
V
A
A
°C
°C
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward Voltage
VF
Repetitive peak reverse current
IRRM
Current squared time
I²t
Junction capacitance
CJ
Thermal resistance
Rth(JA)
Rth(JL)
Notes: 1. Mounted on P.C.B with 1.5*1.0mm copper pads..
IF = 2.0A
VR=Max. VRRM, Ta=25°C
t<8.3ms, Ta = 25°C
VR=4V, f=1.0MHz
Junction to ambient (Note)
Junction to lead (Note)
-
0.92 0.95
V
-
0.08
5
uA
-
14.9
-
2
AS
-
35
-
pF
-
80
-
°C/W
-
20
-
°C/W
Company reserves the right to improve product design , functions and reliability without notice. _REV:A
QW-JBR05
Comchip Technology CO., LTD.
Page 1