TVP06B6V8-G Datasheet, PDF (1/5 Pages) Comchip Technology – SMD Transient Voltage Suppressor

SMD Transient Voltage Suppressor
TVP06B6V8-G Thru. TVP06B601-G
Breakdown Voltage: 6.8 ~ 600Volts
Power Dissipation: 600 Watts
RoHS Device
Features
-Glass passivated chip.
-Low leakage.
-Uni and Bidirectional unit.
-Excellent clamping capability.
-Very fast response time.
-RoHS compliant.
SMB/DO-214AA
0.087(2.20)
0.077(1.96)
0.191(4.85)
0.171(4.35)
0.155(3.94)
0.130(3.30)
Mechanical Data
-Case: Molded plastic,JEDEC SMB/DO-214AA
-Epoxy: UL 94V-0 rate flame retardant.
.
-Terminals: solderable per MIL-STD-750,
method 2026
-Polarity: Cathode band denoted.
-Approx. weight: 0.108 grams
0.096(2.44)
0.084(2.13)
0.060(1.52)
0.030(0.75)
0.216(5.50)
0.201(5.10)
0.012(0.30)
0.006(0.15)
0.008(0.20)
0.001(0.02)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristics
Symbol
Value
Peak power dissipation on 10/1000μS
waveform (Note 1 )
PPP
Peak pulse current on 10/1000μS waveform
IPP
(Note 1)
Steady state power dissipation at TL=75 ^OC
PD
600
See Next Table
5.0
Peak forward surge current, 8.3mS single half
sine-wave uni-directional only (Note 2)
IFSM
100
Units
W
A
W
A
Maximum instantaneous forward voltage at
25.0A for uni-directional only (Note 3)
VF
3.5/5.0
Operation junction temperature
TJ
-55 to +150
Storage temperature range
TSTG
-55 to +150
Note:
1. Non-repetitive current pulse, per Fig. 5 and derated above TA=25 ^OC per Fig.1
2. Measured on 8.3 mS single half sine-wave or equivalent square wave, duty cycle=4 pulse per minute maximum.
3. VF<3.5V for devices of VBR <200V and VF <5.0V for devices of VBR >201V
QW-BTV18
V
O_C
O_C
REV:A
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