TPA2029NND03-HF Datasheet, PDF (1/5 Pages) Comchip Technology – General Purpose Transistor

General Purpose Transistor
TPA2029NND03-HF (PNP)
RoHS Device
Halogen Free
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-
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+
+
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Features
-PNP Epitaxial Silicon Transistor.
-Excellent hFE linearity.
-For portable equipment(i.e. Mobile phone,MP3,.
-(i.e. Mobile phone, MP3, Note book PC, etc.)
Mechanical data
-Case: WBFBP-03B Plastic-Encapsulate Diodes
-Mounting position: Any
-Weight: 0.003 grams.
Circuit Diagram
C
0.049(1.25)
0.045(1.15)
WBFBP-03B
0.049(1.25)
0.045(1.15)
0.022(0.55)
0.018(0.45)
3
0.019(0.47)
REF.
2
1
0.033(0.84)REF.
0.004(0.09)
0.000(0.01)
0.013(0.32)REF.
0.006(0.15)REF.
3
0.013(0.33)
0.009(0.23)
0.033(0.85)
0.030(0.75)
2
1
0.012(0.30)
0.008(0.20)
0.009(0.23)REF.
0.011(0.27)
0.007(0.17)
BE
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
Collector-Base voltage
Collector-Emitter voltage
VCBO
VCEO
Emitter-Base voltage
VEBO
Collector Current-Continuous
IC
Collector Power Dissipatioin
PC
Storage temperature and junction temperature
TSTG , TJ
Min
-55
Typ
Max
-60
-50
-6
-150
150
+150
Unit
V
V
V
mA
mW
°C
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Collector-Base breakdown voltage
V(BR)CBO
IC = -50μA , IE=0
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
V(BR)CEO
V(BR)EBO
IC = -1mA , IB=0
IE = -50μA , IC=0
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
VCB = -60V , IE=0
VEB = -6V , IC=0
VCE = -6V , IC = -1mA
IC = -50mA , IB = -5mA
VCE = -12V , IC = -2mA
f=30MHZ
VCB = -12V , IE=0 , f=1MHZ
Min
-60
-50
-6
120
Typ
140
4
Max
-0.1
-0.1
560
-0.5
5
Unit
V
V
V
µA
µA
V
MHZ
pF
Classification on hFE
Rank
Range
QW-JTR06
Q
120-270
R
180-390
Comchip Technology CO., LTD.
S
270-560
REV: A
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