SR520-G Datasheet, PDF (1/3 Pages) Comchip Technology – Schottky Barrier Rectifier

Schottky Barrier Rectifier
SR520-G Thru. SR5200-G
Forward current: 5.0A
Reverse voltage: 20 to 200V
RoHS Device
Features
-Axial lead type devices for through hole design.
-Low power loss, high efficiency.
-High current capability, Low forward voltage drop.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip, metal silicon junction.
-Lead-free part meets environmental standards of
MIL-STD-19500/228
Mechanical Data
-Case: Molded plastic, DO-201AD/DO-27
-Epoxy: UL94V-0 rate flame retardant.
-Lead: Axial lead, solderable per MIL-STD-202,
Method 208 guranteed.
-Polarity: color band denoted cathode end.
-Weight: 1.10 gram (approx.).
Comchip
SMD Diode Specialist
DO-27
1.0(25.4) min.
0.052(1.30)
DIA.
0.048(1.20)
0.375(9.50)
0.285(7.20)
1.0(25.4) min.
0.220(5.60)
DIA.
0.197(5.00)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
Parameter
Maximum recurrent peak reverse voltage
Symbol ^{SR520 SR540 SR560 SR5100 SR5150 SR5200} Unit
-G
-G
-G
-G
-G
-G
VRRM
20
40
60
100
150
200
V
Maximum RMS voltage
VRMS
14
28
42
70
105
140
V
Maximum DC blocking voltage
Maximum instantaneous forward voltage
at IF=5A,TA=25°C
Operating junction temperature range
VDC
20
VF
0.50
TJ
40
60
0.55
0.75
-50 ~ +150
100
0.81
150
200
V
0.87
0.90 V
-50 ~ +175
°C
Parameter
Conditions
Symbol
Forward rectified current see Fig.1
IO
8.3ms single half sine-wave superimposed
Forward surge current
on rate load (JEDEC method)
IFSM
VR =VRRM TA=25°C
IR
Reverse Current
VR =VRRM TA=100°C
IR
Thermal Resistance
Junction to ambient
RθJA
Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage
CJ
Storage temperature
TSTG
MIN.
-50
QW-BB027
TYP.
24
380
MAX. Unit
5.0
A
125
A
0.5
mA
20
mA
°C/W
pF
+175
°C
REV:A
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