SR320-HF Datasheet, PDF (1/3 Pages) Comchip Technology – Schottky Barrier Rectifier

Schottky Barrier Rectifier
SR320-HF Thru. SR3200-HF
Forward current: 3.0A
Reverse voltage: 20 to 200V
RoHS Device
Halogen Free
Comchip
SMD Diode Specialist
DO-27
Features
-Axial lead type devices for through hole design.
-Low power loss, high efficiency.
-High current capability, Low forward voltage drop.
-High surge capability.
-Ultra high-speed switching.
-Silicon epitaxial planar chip, metal silicon junction.
-Lead-free part meets environmental standards of
MIL-STD-19500/228
Mechanical Data
-Case: Molded plastic, DO-201AD/DO-27
-Epoxy: UL94V-0 rate flame retardant.
-Lead: Axial lead, solderable per MIL-STD-202,
Method 208 guranteed.
-Polarity: color band denoted cathode end.
-Weight: 1.10 gram (approx.).
1.0(25.4) min.
0.052(1.30)
DIA.
0.048(1.20)
0.375(9.50)
0.285(7.20)
1.0(25.4) min.
0.220(5.60)
DIA.
0.197(5.00)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
Parameter
Symbol ^SR320
-HF
SR340
-HF
SR360
-HF
SR3100
-HF
SR3150
-HF
SR3200
-HF
Unit
Maximum repetitive peak reverse voltage
VRRM
20
40
60
100
150
200 V
Maximum RMS voltage
VRMS
14
28
42
70
105
140 V
Maximum DC blocking voltage
Maximum forward voltage
@3A , TA=25°C
Operating junction temperature range
VDC
20
VF
0.45
TJ
40
60
0.50
0.70
-50 ~ +150
100
0.81
150
200 V
0.87
0.90 V
-50 ~ +175
°C
Parameter
Conditions
Symbol MIN.
Forward rectified current
Forward surge current
Reverse current
Thermal resistance
see Fig.1
8.3ms single half sine-wave superimposed
on rate load (JEDEC method)
VR =VRRM TA=25°C
VR =VRRM TA=100°C
Junction to ambient
IO
IFSM
IR
IR
RθJA
Diode junction capacitance
f=1MHZ and applied 4V DC reverse Voltage
CJ
Storage temperature
TSTG
-55
Company reserves the right to improve product design , functions and reliability without notice.
QW-JB040
TYP.
55
250
MAX. Unit
3.0
A
70
A
0.5 mA
20 mA
°C/W
pF
+175 °C
REV:A
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