SR1030-G Datasheet, PDF (1/3 Pages) Comchip Technology – Schottky Barrier Rectifiers

Schottky Barrier Rectifiers
SR1030-G Thru. SR10200-G
Forward current: 10A
Reverse voltage: 30 to 200V
RoHS Device
Features
-Metal of silicon rectifier , majority carrier conduction.
-Guard ring for transient protection.
-Low Power Loss / High Efficiency.
-High current capability , low VF.
-High surge capacity.
-For use in low voltage , high frequency inverters ,
free wheeling,and polarity protection applications.
Mechanical data
-Case: TO-220AC, molded plastic.
-Epoxy: UL 94V-0 rate flame retardant.
-Polarity: As marked on the body.
-Mounting position: Any
-Weight: 2.24 grams
TO-220AC
0.135(3.44)
0.103(2.62)
0.413(10.50)
0.374( 9.50)
0.153(3.90)
0.146(3.70)
0.04 MAX
(1.0)
0.270(6.90)
0.230(5.80)
0.610(15.50)
0.583(14.80)
0.189(4.80)
0.173(4.40)
0.055(1.40)
0.047(1.20)
0.057(1.45)
0.045(1.14)
0.177 _0.583(14.80)
(4.50) _0.531(13.50)
MAX.
0.043(1.10)
0.032(0.80)
0.102(2.60)
0.091(2.30)
0.024(0.60)
0.012(0.30)
0.138 _MAX.
(3.50)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Characteristics
Maximum recurrent peak reverse voltage
Symbol
SR10
30-G
VRRM
30
SR10
40-G
40
SR10
50-G
50
SR10
60-G
60
SR10
80-G
80
SR10 SR10 SR10
100-G 150-G 200-G
100
150
200
Unit
V
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
( See Fig.1 ) @TC=95°C
Peak forward surge current, 8.3ms single
half sine-wave super imposed on rated load
(JEDEC method)
VRMS
21
28
35
42
56
70
105
140
V
VDC
30
40
50
60
80
100
150
200
V
I(AV)
10.0
A
IFSM
175
A
Peak forward voltage at 10.0A DC (Note 1)
VF
Maximum DC reverse current @TJ=25°C
at rated DC blocking voltage
@TJ=100°C
IR
Typical junction capacitance (Note 2)
CJ
Typical thermal resistance (Note 3)
RθJC
Operating temperature range
TJ
Storage temperature range
TSTG
0.55
0.70
0.85
1.0
50
500
2.5
-55 ~ +125
-55 ~ +150
0.95
V
mA
pF
°C/W
°C
°C
NOTES: 1. 1.300us pulse width,2% duty cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance junction to case.
Company reserves the right to improve product design , functions and reliability without notice.
QW-BB031
Comchip Technology CO., LTD.
REV:B
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