RB551V-30 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

SMD Schottky Barrier Diode
RB551V-30 ^{(RoHS Device)}
Io = 500 mA
VR = 20 Volts
SMD Diodes Specialist
Features
Low reverse current.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: SOD-323 Standard package, molded
plastic.
Terminals: Gold plated, solderable per MIL-
STD-750D, method 2026.
Mounting position: Any.
0.014(0.35)
0.010(0.25)
SOD-323
0.071(1.80)
0.063(1.60)
0.106(2.70)
0.098(2.50)
0.055(1.40)
0.047(1.20)
0.039(1.00)Max.
0.004(0.10)Max.
0.006(0.15)Max.
0.019(0.475)REF
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25°C unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Conditions
Symbol _Min Typ _{Max Unit}
VRRM
30
V
VR
20
V
IO
500 mA
Forward current,surge peak
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
IFSM
2
A
Storage temperature
Junction temperature
TSTG
-40
Tj
+125 °C
+125 °C
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Forward voltage
Reverse current
Conditions
IF = 100 mA
IF = 500 mA
VR = 20 V
Symbol _Min Typ _{Max Unit}
0.36
VF
V
0.47
IR
100 uA
QW-BB026
Comchip Technology CO., LTD.
REV:B
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