RB520S-30 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

SMD Schottky Barrier Diode
RB520S-30 ^{(RoHS Device)}
Io = 200 mA
VR = 30 Volts
Features
Low reverse current.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: SOD523 standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking code: cathode band & B
Mounting position: Any
Weight: 0.0012 gram(approx.).
Circuit Diagram
SMD Diodes Specialist
0.014(0.35)
0.010(0.25)
SOD-523
0.051(1.30)
0.043(1.10)
0.067(1.70)
0.059(1.50)
0.033(0.85)
0.030(0.75)
0.031(0.77)
0.020(0.51)
0.003(0.07)
0.001(0.01)
0.006(0.15)
0.003(0.08)
0.008(0.20)
REF
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25°C unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Conditions
Symbol _Min Typ _{Max Unit}
VRRM
35
V
VR
30
V
IO
200 ^mA
Forward current,surge peak
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
IFSM
1
A
Storage temperature
Junction temperature
TSTG
-40
Tj
+125
O
C
+125
O
C
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Forward voltage
Reverse current
Conditions
IF = 200 mA
VR = 10 V
Symbol _Min Typ _{Max Unit}
VF
0.6
V
IR
1
uA
QW-BB023
Comchip Technology CO., LTD.
REV:A
Page 1