RB520G30-G Datasheet, PDF (1/2 Pages) Comchip Technology – SMD Schottky Barrier Diode

SMD Schottky Barrier Diode
RB520G30-G (RoHS Device)
Reverse Voltage: 30 Volts
Forward Current: 100 mA
Features:
Small Surface Mounting Type
Low Reverse Current and Low Forward Voltage.
High Reliability
Mechanical Data:
Case: Molded plastic SOD-723
Terminals: Solderable per MIL-STD-750, Method
2026.1.
Polarity: Indicated by cathode band.
Mounting position: Any.
Marking: E
E2
E
D+
SOD-723
b
-
E1
L
θ
c
Symbol
A
A1
b
c
D
E
E1
E2
L
θ
Inches
Min. Max.
0.021 0.026
0.020 0.023
0.010 0.014
0.003 0.006
0.022 0.026
0.035 0.043
0.051 0.059
0.008 REF
0.001 0.003
7º REF
A1
θ
A
Millimeters
Min. Max.
0.525 0.650
0.515 0.580
0.250 0.350
0.080 0.150
0.550 0.650
0.900 1.100
1.300 1.500
0.200 REF
0.010 0.070
7º REF
Maximum Ratings (at TA=25ºC unless otherwise specified)
Parameter
Symbol
Limits
Unit
DC reverse voltage
V_R
30
V
Mean rectifying current
I_o
100
mA
Peak forward surge current
I_FSM
500
mA
Junction temperature
T_J
125
ºC
Storage temperature
T_stg
-40~+125
ºC
Electrical Ratings (at TA=25ºC unless otherwise specified)
Parameter
Forward voltage
Reverse current
Symbol
V_F
I_R
Min. Typ. Max. Unit Conditions
0.45 V
0.5 μA
I_F=10mA
V_R=10V
“-G” suffix designated RoHS compliant version
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