MMST2222A-G Datasheet, PDF (1/4 Pages) Comchip Technology – General Purpose Transistor

General Purpose Transistor
MMST2222A-G (NPN)
RoHS Device
Features
-Power dissipation
PCM : 0.2W (TA=25 ^OC)
-Collector current
ICM : 0.6A
-Collector-base voltage
V(BR)CBO : 75V
-Operating and storage junction temperature range
TJ, TSTG : -55 ^OC to +150 ^OC
Marking: K3P
Collector
3
1
Base
2
Emitter
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Collector-Base breakdown voltage
IC =10μA , IE=0
Collector-Emitter breakdown voltage
IC =10mA , IB=0
Emitter-Base breakdown voltage
IE =10μA , IC=0
Collector cut-off current
Collector cut-off current
VCB=70V , IE=0
VCE=35V , IB=0
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
VEB=3V , IC=0
VCE=10V , IC=150mA
VCE=10V , IC=1mA
IC=500mA , IB=50mA
Base-Emitter saturation voltage
IC=500mA , IB=50mA
Transition frequency
VCE=20V , IC=20mA
f=100MHZ
SOT-323
0.054 (1.35)
0.045 (1.15)
0.044 (1.10)
0.035 (0.90)
0.087 (2.20)
0.070 (1.8)
3
1
2
0.056 (1.40)
0.047 (1.20)
0.006 (0.15)
0.002 (0.05)
0.087 (2.20)
0.078 (2.00)
0.016 (0.40)
0.008 (0.20)
0.004 (0.10) max
0.004 (0.10) min
Dimensions in inches and (millimeter)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
Min
75
40
6
100
50
fT
300
Max Unit
V
V
V
0.1
µA
0.1
µA
0.1
µA
300
0.6
V
1.2
V
MHZ
Output capacitance
Delay time
Rise time
Storage time
Fall time
QW-BTR06
VCB=10V , IE=0
Cob
f=1MHZ
VCC=30V , IC=150mA
td
VBE(off)=0.5V , IB1=15mA
tr
ts
VCC=30V , IC=150mA
IB1=IB2=15mA
tf
8
pF
10
nS
25
nS
225
nS
60
nS
REV:A
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