MMBTA92-G Datasheet, PDF (1/5 Pages) Comchip Technology – General Purpose Transistor

General Purpose Transistor
MMBTA92-G (PNP)
RoHS Device
Features
-High voltage transistor.
Diagram:
Collector
3
1
Base
2
Emitter
0.056(1.40)
0.047(1.20)
0.041(1.05)
0.035(0.90)
SOT-23
0.119(3.00)
0.110(2.80)
3
1
2
0.079(2.00)
0.071(1.80)
0.006(0.15)
0.003(0.08)
0.100(2.550)
0.089(2.250)
0.020(0.50)
0.012(0.30)
0.004(0.10) max
0.020(0.50)
0.012(0.30)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current-Continuous
Collector current-pulsed
Collector power dissipation
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC
RΘJA
TJ
TSTG
Dimensions in inches and (millimeter)
Value
-300
-300
-5
-200
-500
300
410
150
-55 to +150
Electrical Characteristics (Ta=25°C, unless otherwise specified)
Parameter
Conditions
Symbol
Min
Max
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-100μA, IE=0
IC=-1mA, IB=0
IE=-100μA, IC=0
VCB=-200V, IE=0
VEB=-5V, IC=0
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-30mA
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
-300
-300
-5
60
100
60
-0.25
-0.1
200
Collector-emitter saturation voltage
IC=-20mA, IB=-2mA
VCE(sat)
-0.2
Base-emitter saturation voltage
IC=-20mA, IB=-2mA
VBE(sat)
-0.9
Transition frequency
VCE=-20V, IC=-10mA
fT
50
f=30MHz
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR39
Comchip Technology CO., LTD.
Unit
V
V
V
mA
mA
mW
°C/W
°C
°C
Unit
V
V
V
μA
μA
V
V
MHz
REV: A
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