MMBTA42-G Datasheet, PDF (1/5 Pages) Comchip Technology – General Purpose Transistor

General Purpose Transistor
MMBTA42-G (NPN)
RoHS Device
Features
-High breakdown voltage.
-Low collector-emitter saturation voltage.
-Ultra small surface mount package.
Diagram:
Collector
3
1
Base
2
Emitter
0.056(1.40)
0.047(1.20)
0.041(1.05)
0.035(0.90)
SOT-23
0.119(3.00)
0.110(2.80)
3
1
2
0.079(2.00)
0.071(1.80)
0.006(0.15)
0.003(0.08)
0.100(2.550)
0.089(2.250)
0.020(0.50)
0.012(0.30)
0.004(0.10) max
0.020(0.50)
0.012(0.30)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current-Continuous
Collector current-peak
Collector power dissipation
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC
RΘJA
TJ
TSTG
Dimensions in inches and (millimeter)
Value
300
300
5
300
500
350
357
150
-55 to +150
Electrical Characteristics (Ta=25°C, unless otherwise specified)
Parameter
Conditions
Symbol
Min
Max
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IC=100μA, IE=0
IC=1mA, IB=0
IE=100μA, IC=0
VCB=200V, IE=0
VEB=5V, IC=0
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
IC=20mA, IB=2mA
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
300
300
5
60
100
60
0.25
0.1
200
0.2
Base-emitter saturation voltage
IC=20mA, IB=2mA
VBE(sat)
0.9
Transition frequency
VCE=20V, IC=10mA
fT
50
f=30MHz
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR38
Comchip Technology CO., LTD.
Unit
V
V
V
mA
mA
mW
°C/W
°C
°C
Unit
V
V
V
μA
μA
V
V
MHz
REV:A
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