MMBT5551-G Datasheet, PDF (1/5 Pages) Comchip Technology – General Purpose Transistor

General Purpose Transistor
MMBT5551-G (NPN)
RoHS Device
Features
- Epitaxial planar die construction.
- Complementary PNP type available (MMBT5401-G).
- Ideal for medium power amplification and switching.
Mechanical data
- Case: SOT-23, molded plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
- Approx. weight: 0.008 grams(approx.).
Diagram:
Collector
2
1
Base
3
Emitter
SOT-23
0.055(1.40)
0.047(1.20)
0.041(1.05)
0.035(0.90)
0.118(3.00)
0.110(2.80)
3
1
2
0.079(2.00)
0.071(1.80)
0.006(0.15)
0.003(0.08)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.004(0.10) max
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
Collector current
IC
Collector power dissipation
PC
Thermal resistance from junction to ambient
RΘJA
Junction temperature range
TJ
Storage temperature range
TSTG
Value
180
160
6
600
300
416
150
-55 ~ +150
Unit
V
V
V
mA
mW
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR20
Comchip Technology CO., LTD.
REV:B
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