MMBT5401-G Datasheet, PDF (1/4 Pages) Comchip Technology – General Purpose Transistor

General Purpose Transistor
MMBT5401-G (PNP)
RoHS Device
Features
-Epitaxial planar die construction.
-Complementary NPN type available (MMBT5551-G).
-Ideal for medium power amplification and switching.
Diagram:
Collector
3
1
Base
Marking: 2L
2
Emitter
0.056(1.40)
0.047(1.20)
0.041(1.05)
0.035(0.90)
SOT-23
0.119(3.00)
0.110(2.80)
3
1
2
0.079(2.00)
0.071(1.80)
0.006(0.15)
0.002(0.05)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.004(0.10) max
0.008(0.20) min
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current - continuous
Collector dissipation
Junction and storage temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
Value
-160
-150
-5
-0.6
0.3
-55 ~ +150
Unit
V
V
V
A
W
O_C
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
IC=-100μA, IE=0
IC=-1mA, IB=0
IE=-10μA, IC=0
VCB=-120V, IE=0
VEB=-4V, IC=0
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
IC=-50mA, IB=-5mA
IC=-50mA, IB=-5mA
VCE=-5V, IC=-10mA, f=30MHz
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
Min
-160
-150
-5
80
100
50
100
QW-BTR18
Comchip Technology CO., LTD.
Max
V
-0.1
-0.1
Unit
V
V
V
μA
μA
200
-0.5
V
-1
V
Mhz
REV:B
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