MMBT4403-G Datasheet, PDF (1/2 Pages) Comchip Technology – General Purpose Transistors

General Purpose Transistors
MMBT4403-G (PNP)
RoHS Device
COMCHIP
SMD Diodes Specialist
Features
-Switching transistor.
Marking: 2T
Collector
3
0.056(1.40)
0.047(1.20)
0.044(1.10)
0.035(0.90)
SOT-23
0.119(3.00)
0.110(2.80)
3
1
2
0.083(2.10)
0.066(1.70)
0.006(0.15)
0.002(0.05)
0.103(2.60)
0.086(2.20)
1
Base
0.020(0.50)
0.013(0.35)
0.006(0.15) max
0.007(0.20) min
2
Emitter
Dimensions in inches and (millimeter)
O
Maximum Ratings (at Ta=25 C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current-continuous
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
-40
-40
-5
-0.6
300
150
-55 to +150
O
Electrical Characteristics (at Ta=25 C unless otherwise noted)
Parameter
Symbol Conditions
Min
Typ.
Max
V
V
V
A
mW
O_C
O_C
Unit
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
V C E ( S AT)
V B E ( S AT)
fT
IC=-100μA, IE=0
IC=-1mA, IB=0
IE=-100μA, IC=0
VCB=-35V, IE=0
VCE=-35V, IB=0
VEB=-4V, IC=0
VCE=-2V, IC=-150mA
IC=-150mA, IB=-15mA
IC=-150mA, IB=-15mA
VCE=-10V, IC=-20mA
f=100MHz
-40
-40
-5
100
200
-0.1
-0.1
-0.1
300
-0.4
-0.95
V
V
V
μA
μA
μA
V
V
ΜΗz
QW-BTR33
Comchip Technology CO., LTD.
REV:A
Page 1