MMBT3906 Datasheet, PDF (1/5 Pages) NXP Semiconductors – PNP switching transistor

General Purpose Transistor (PNP)
MMBT3906
PNP Silicon Type
COMCHIP
www.comchiptech.com
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available
(MMBT3904)
Ideal for Medium Power Amplification and
Switching
.119 (3.0)
.110 (2.8)
.020 (0.5)
3
SOT-23
Top View
COLLECTOR
3
1
BASE
2
EMITTER
1
2
.037(0.95) .037(0.95)
.020 (0.5) .020 (0.5)
.103 (2.6)
.086 (2.2)
Dimensions in inches (millimeters)
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
Value
–40
–40
–5.0
–200
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
R_qJA
PD
R_qJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
MDS0306002A
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