MMBT3906-HF_12 Datasheet, PDF (1/5 Pages) Comchip Technology – General Purpose Transistor

General Purpose Transistor
MMBT3906-HF (PNP)
RoHS Device
Halogen Free
Features
-Epitaxial planar die construction
-As complementary type, the NPN
transistor MMBT3906-HF is recommended
Collector
3
1
Base
2
Emitter
0.056 (1.40)
0.047 (1.20)
0.041 (1.05)
0.035 (0.90)
SOT-23
0.119 (3.00)
0.110 (2.80)
3
1
2
0.079 (2.00)
0.071 (1.80)
0.006 (0.15)
0.003 (0.08)
0.100 (2.55)
0.089 (2.25)
0.020 (0.50)
0.012 (0.30)
0.004 (0.10) max
0.020 (0.50)
0.012 (0.30)
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current-Continuous
Collector dissipatioin
Symbol
VCBO
VCEO
VEBO
IC
PC
Storage temperature and junction temperature
TSTG , TJ
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
Conditions
IC =-100μA , IE=0
IC =-1mA , IB=0
IE =-100μA , IC=0
VCB=-40V , IE=0
VCE=-40V , IB=0
VEB=-5V , IC=0
VCE=-1V , IC=-10mA
VCE=-1V , IC=-50mA
IC=-50mA , IB=-5mA
IC=-50mA , IB=-5mA
VCE=-20V , IC=-10mA
f=100MHZ
VCC=-3.0V , VBE=-0.5V
IC=-10mA , IB1=-1.0mA
VCC=-3.0Vdc , IC=-10mA
IB1=IB2=-1.0mA
Min
-55
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
td
tr
ts
tf
Typ
Min
-40
-40
-5
100
60
250
QW-JTR01
Max
-40
-40
-5
-0.2
0.3
+150
Unit
V
V
V
A
W
°C
Max
-0.1
-0.1
-0.1
300
-0.3
-0.95
35
35
225
75
Unit
V
V
V
µA
µA
µA
V
V
Mhz
nS
nS
nS
nS
REV:B
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