MMBT3904-HF_12 Datasheet, PDF (1/4 Pages) Comchip Technology – General Purpose Transistor

General Purpose Transistor
MMBT3904-HF (NPN)
RoHS Device
Halogen Free
Features
-Epitaxial planar die construction
-As complementary type, the PNP
transistor MMBT3904-HF is recommended
Collector
3
0.055(1.40)
0.047(1.20)
0.041(1.05)
0.035(0.90)
SOT-23
0.118(3.00)
0.110(2.80)
3
1
2
0.079(2.00)
0.071(1.80)
0.006(0.15)
0.002(0.05)
0.100(2.55)
0.089(2.25)
1
Base
2
Emitter
0.020(0.50)
0.012(0.30)
0.004(0.10) max
0.005(0.20) min
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current-Continuous
Collector dissipation
Thermal resistance, junction to ambient
Storage temperature and junction temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TSTG, TJ
Min
-55
Typ
Max
60
40
6
0.2
0.2
625
+150
Unit
V
V
V
A
W
O_C/W
O_C
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
Conditions
IC =100μA , IE=0
IC =1mA , IB=0
IE =100μA , IC=0
VCB=60V , IE=0
VCE=30V , VBE(off)=3V
VEB=5V , IC=0
VCE=1V , IC=10mA
VCE=1V , IC=50mA
IC=50mA , IB=5mA
IC=50mA , IB=5mA
VCE=20V , IC=10mA
f=100MHZ
VCC=3.0V , VBE=-0.5V
IC=10mA , IB1=1.0mA
VCC=3.0V , IC=10mA
IB1=IB2=1.0mA
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
td
tr
ts
tf
QW-JTR02
Comchip Technology CO., LTD.
Min
60
40
6
100
60
300
Max
0.1
50
0.1
400
0.3
0.95
35
35
200
50
Unit
V
V
V
µA
nA
µA
V
V
Mhz
nS
nS
nS
nS
REV:A
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