MMBT3904-G Datasheet, PDF (1/2 Pages) Comchip Technology – GENERAL PURPOSE TRANSISTORS

General Purpose Transistor
MMBT3904-G (NPN)
RoHS Device
SMD Diodes Specialist
Features
-Epitaxial planar die construction
-As complementary type, the PNP
transistor MMBT3906-G is recommended
Collector
3
0.056 (1.40)
0.047 (1.20)
0.044 (1.10)
0.035 (0.90)
SOT-23
0.119 (3.00)
0.110 (2.80)
3
1
2
0.083 (2.10)
0.066 (1.70)
0.006 (0.15)
0.002 (0.05)
0.103 (2.60)
0.086 (2.20)
1
Base
0.020 (0.50)
0.013 (0.35)
0.006 (0.15) max
0.007 (0.20) min
2
Emitter
Dimensions in inches and (millimeter)
O
Maximum Ratings(at TA=25 C unless otherwise noted)
Parameter
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Symbol
VCBO
VCEO
VEBO
Min
Typ
Collector current-Continuous
IC
Col lec tor di ssipa tioi n
PC
St or ag e tempe rat ur e an d jun ction tempe rat ur e
TSTG , TJ
-55
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Max
60
40
6
0.2
0. 2
+1 50
Unit
V
V
V
A
W
O
C
Parameter
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
Conditions
IC =100μA , IE=0
IC =1mA , IB=0
IE =100μA , IC=0
VCB=60V , IE=0
VCE=40V , IB=0
VEB=5V , IC=0
VCE=1V , IC=10mA
VCE=1V , IC=50mA
IC=50mA , IB=5mA
IC=50mA , IB=5mA
VCE=20V , IC=10mA
f=100MHZ
VCC=3.0Vdc , VBE=-0.5Vdc
IC=10mAdc , IB1=1.0mAdc
VCC=3.0Vdc , IC=10mAdc
IB1=IB2=1.0mAdc
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
td
tr
ts
tf
Min
60
40
6
100
60
250
Max
0.1
0.1
0.1
300
0.3
0.95
35
35
200
50
Unit
V
V
V
µA
µA
µA
V
V
Mhz
nS
nS
nS
nS
QW-BTR01
REV:A
Page 1