MMBT2907-G Datasheet, PDF (1/1 Pages) Comchip Technology – GENERAL PURPOSE TRANSISTORS

General Purpose Transistor
MMBT2907-G (PNP)
RoHS Device
SMD Diodes Specialist
Features
-Epitaxial planar die construction
-Device is designed as a general purpose
amplifier and switching.
Collector
3
0.056 (1.40)
0.047 (1.20)
0.044 (1.10)
0.035 (0.90)
SOT-23
0.119 (3.00)
0.110 (2.80)
3
1
2
0.083 (2.10)
0.066 (1.70)
0.006 (0.15)
0.002 (0.05)
0.103 (2.60)
0.086 (2.20)
1
Base
0.020 (0.50)
0.013 (0.35)
0.006 (0.15) max
0.007 (0.20) min
2
Emitter
Dimensions in inches and (millimeter)
O
Maximum Ratings(at TA=25 C unless otherwise noted)
Parameter
Symbol
Min
Max
Unit
Collector-Base voltage
VCBO
-60
Powe r di ssipa tioi n
PCM
0. 3
Collector current-Continuous
ICM
-0.6
St or ag e tempe rat ur e an d jun ction tempe rat ur e
TSTG , TJ
-55
+1 50
O
Electrical Characteristics(at TA=25 C unless otherwise noted)
Parameter
Conditions
Symbol Min
Collector-Base breakdown voltage
IC=-10µA, IE=0
V(BR)CBO
-60
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
IC=-10mA, IB=0
IE=-10µA, IC=0
V(BR)CEO
-40
V(BR)EBO
-5
Max
Collector cut-off current
Collector cut-off current
Emitter cut-off current
VCB=-50V, IE=0
VCB=-35V, IB=0
VEB=-3V, IC=0
ICBO
ICEO
IEBO
-0.1
-0.1
-0.1
DC current gain
Collector-emitter saturation voltage
VCE=-10V, IC=-150mA
hFE(1)
100
300
VCE=-10V, IC=-1mA
hFE(2)
50
IC=-500mA, IB=-50mA
VCE(sat)
-1
Base-emitter saturation voltage
Transition frequency
IC=-500mA, IB=-50mA
VBE(sat)
-2
VCE=-20V, IC=-50mA
fT
200
F=100MHz
V
W
A
o_C
Unit
V
V
V
µA
µA
µA
V
V
Mhz
QW-BTR04
REV:A
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