MBR20H100FCT-G Datasheet, PDF (1/3 Pages) Comchip Technology – Schottky Barrier Rectifiers

Schottky Barrier Rectifiers
Comchip
SMD Diodes Specialist
MBR20H100FCT-G Thru. MBR20H200FCT-G
Reverse Voltage: 100 to 200 V
Forward Current: 20 A
RoHS Device
Features
-Plastic material used carries underwriters laboratory
laboratory classifications 94V-0.
-Guard ring for transient protection.
-Low power loss high efficiency.
-High current capability, low forward voltage drop.
-High surge capacity.
-For use in power supply-output rectification,
power management, instrumentation.
-Guarding for overvoltage protection.
-High temperature soldering guaranteed:
260°C/10 seconds,0.25”(6.35mm) from case.
Mechanical Data
-Case: JEDEC ITO-220AB, molded plastic body.
-Terminals: Pure tin plated, lead free.Solderable per
MIL-STD-750,Method 2026
-Polarity: As marked
-Mounting position: Any
-Mounting torque: 5in. -1bs.max
-Weight: 2.24 grams
ITO-220AB
0.406(10.30)
0.386( 9.80)
0.138(3.50)
0.122(3.10)
0.118(3.00)
0.102(2.60)
0.189(4.80)
0.173(4.40)
0.118(3.00)
0.106(2.70)
0.157(4.00)
0.142(3.60)
0.610(15.50)
0.571(14.50)
0.071(1.80)
0.055(1.40)
0.059(1.50)
0.043(1.10)
0.030(0.76)
0.020(0.51)
0.571(14.50)
0.531(13.50)
0.112(2.84)
0.088(2.24)
Dimensions in inches and (millimeter)
0.030(0.76)
0.020(0.51)
0.114(2.90)
0.098(2.50)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
Symbol
MBR
20H100FC-G
MBR
20H150FCT-G
MBR
20H200FCT-G
Maximum Recurrent Peak Reverse Voltage
VRRM
100
150
200
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRMS
70
105
14
VDC
100
150
200
Maximum Average Forward Rectified
Current @ TC=125°C
I(AV)
20.0
Peak repetitive forward current (rated VR, square wave,20KHZ)
IFRM
at TC=125°C
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
IFSM
Super Imposed On Rated Load(JEDEC Method)
20.0
150
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous forward voltage at:
forward voltage at:
(Note 2)
IF=10A@ TJ= 25°C
IF=10A@ TJ=125°C
IF=20A@ TJ= 25°C
IF=20A@ TJ=125°C
Maximum Instantaneous reverse current @ Tc= 25°C at
Rate DC blocking voltage @ Tc= 125°C at (Note 2)
Voltage rate kf change (Rated VR )
IRRM
VF
IR
dV/dt
1.0
0.5
0.85
0.88
0.75
0.75
0.95
0.97
0.85
0.85
5
2
10000
Maximum Typical Thermal Resistance (Note3)
RθJC
1.50
Operating Junction Temperature Range
TJ
-65 to +175
Storage Temperature Range
TSTG
-65 to +175
NOTES:
1. 2.0us Pulse Width, f=1.0 KHz.
2. Pulse test: 300us pulse width, 1% duty cycle.
3. Thermal Resistsnce from junction to case per leg,Mount on heatsink sixe of 2in*3in*0.25in Al-plate.
QW-BB049
Comchip Technology CO., LTD.
Unit
V
V
V
A
A
A
A
V
µA
mA
V/uS
°C/W
°C
°C
REV:A
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