MBR2030CT-G Datasheet, PDF (1/3 Pages) Comchip Technology – SMD Schottky Barrier Rectifiers

SMD Schottky Barrier Rectifiers
Comchip
SMD Diode Specialist
MBR2030CT-G Thru. MBR20150CT-G
Voltage: 30 to 150 V
Current: 20.0 A
RoHS Device
Features
-Metal of silicon rectifier, majority carrier conduction.
-Guard ring for transient protection.
-Low power loss, high efficiency.
-High current capability, low VF.
-High surge capacity.
-For use in low voltage, high frequency inverters,
free wheeling,and polarity protection applications.
0.108
(2.75)
TO-220AB
0.413(10.50)
0.347( 9.50)
0.153(3.90)
0.146(3.70)
0.270(6.90)
0.230(5.80)
0.610(15.50)
0.583(14.80)
0.187(4.70)
0.148(3.80)
0.055(1.40)
0.047(1.20)
Mechanical Data
-Case: TO-220AB, molded plastic
-Epoxy: UL 94-V0 rate flame retardant.
-Polarity: As marked on the body.
-Mounting position: Any
-Weight: 2.24 grams
0.051(1.30)
MAX
0.157 _0.583(14.80)
(4.0) _0.531(13.50)
0.043(1.10)
0.032(0.80)
0.102(2.60)
0.091(2.30)
Dimensions in inches and (millimeter)
0.024(0.60)
0.012(0.30)
0.126
(3.20)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
MBR
MBR
MBR
MBR
MBR
MBR
MBR
Symbol
Unit
2030CT-G 2040CT-G 2050CT-G 2060CT-G 2080CT-G 20100CT-G 20150CT-G
Maximum Recurrent Peak Reverse Voltage
VRRM
30
40
50
60
80
100
150
V
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified
I(AV)
Current ( See Fig.1 )
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
IFSM
Super Imposed On Rated Load(JEDEC Method)
IF=10A@ TJ= 25°C
Peak Forward Voltage
(Note 1)
IF=10A@ TJ=125°C
VF
IF=20A@ TJ= 25°C
IF=20A@ TJ=125°C
Maximum DC Reverse Current ^{@ TJ= 25°C}
IR
at Rate DC Blocking Voltage _{@ TJ= 125°C}
Typical Junction Capacitance (Note2)
CJ
21
28
30
40
-
0.57
0.84
0.72
0.10
15.0
400
35
42
50
60
20.0
150
0.80
0.70
0.95
0.85
0.10
10.0
56
70
80
100
0.85
0.75
0.95
0.85
0.10
7.50
320
105
V
150
V
A
A
0.95
0.85
V
1.05
0.95
0.10
mA
5.00
pF
Typical Thermal Resistance (Note3)
RθJC
1.50
3.50
°C/W
Operating Temperature Range
TJ
-55 to +150
°C
Storage Temperature Range
TSTG
-55 to +175
°C
NOTES:
1. 300us pulse width,2% duty cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance junction to case.
QW-BB046
Comchip Technology CO., LTD.
REV:B
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