LL4148-G Datasheet, PDF (1/3 Pages) Comchip Technology – Small-Signal Switching Diode

Small-Signal Switching Diode
LL4148-G
Reverse Voltage:100V
Forward Current: 150 mA
Features
Silicon Epitaxial Planar Diode
Fast switching diode in MiniMELF case especially suited
for automatic insertion.
This diode is also available in other case styles including the
standard 0603 case with the type designation CDSU4148, the
standard 0805 case withthe type designation CDSS4148 and
the standard 1206 case with the type designation CDSN4148
MiniMELF (SOD-80)
Mechanical Data
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05g
Cathode Band Color: Black
Dimensions in mm
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Reverse Voltage
Peak Reverse Voltage
Forward DC Current at Tamb = 25°C⁽¹⁾
V_R
75
V
V_RM
100
V
I_F
200
mA
Average Rectified Current: Half W ave Rectification with
Resistive Load at Tamb = 25°C f ³ 50 Hz⁽¹⁾
I_F(AV)
150
mA
Surge Forward Current at t < 1s and Tj = 25°C
Power Dissipation at Tamb = 25°C⁽¹⁾
Thermal Resistance Junction to Am bient Air⁽²⁾
Thermal Resistance Junction to tie-point
Junction Temperature
Storage Temperature
I_FSM
P_tot
R_èJA
R_qJtp
T_j
T_S
500
500
350
300
175
–65 to +175
mA
mW
°C/W
°C/W
°C
°C
Electrical Characteristics (Tj = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Forward Voltage
Leakage Current
Capacitance
Voltage Rise when Switching ON
(tested with 50 mAForward Pulses)
Reverse Recovery Time
VF
IF = 10mA
—
VR = 20V
—
IR
VR = 75V
—
VR = 20V, TJ = 150°C
—
Ctot
VF = VR = 0
—
Vfr
tp = 0.1µs, Rise time<30ns fp
= 5 to 100kHz
—
trr
IF = 10mA, IR = 1mA,
VR = 6V, RL = 100Ù
—
—1 V
— 25 nA
— 5 µA
— 50 µA
— 4 pF
— 2.5 V
— 4 ns
Rectification Efficiency (See third page)
çí
f = 100MHz, VRF = 2V
0.45 — — —
Notes: (1) Valid provided that electrodes are kept at ambient temper ature
(2) Device mounted on FR4 printed-circuit board
MDS0209003A
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