KBU8005-G Datasheet, PDF (1/3 Pages) Comchip Technology – Silicon Bridge Rectifiers

Silicon Bridge Rectifiers
KBU8005-G Thru. KBU810-G
Reverse Voltage: 50 to 1000V
Forward Current: 8.0A
RoHS Device
Features
-Surge overload rating - 200 amperes peak.
-Ideal for printed circuit board.
-Plastic material has U/L flammability
classification 94V-0
0.700(17.8)
0.600(16.8)
KBU
0.157(4.0)*45°
0.935(23.7)
0.895(22.7)
0.15ΦX23L
(3.8ΦX5.7L)
HOLE TH RU
300
(7 .5)
0.780(19.8)
0.740(18.8)
Mechanical Data
-Case: Molded plastic, KBU
-Mounting position: Any
-Weight: 7.40grams
1.00
M I N.
(25 .4)
0.052(1.3)DIA.
0.048(1.2)TYP.
.08 7 (2.2)
.0 71 (1 .8)
0.220(5.6)
0.180(4.6)
0.276(7.0)
0.256(6.5)
Dimensions in inches and (millimeter)
Maximum ratings and electrical characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Symbol ^KBU
8005-G
KBU
801-G
KBU
802-G
KBU
804-G
KBU
806-G
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
Maximum RMS Voltage
VRMS
35
70
140
280
420
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
Maximum Average Forward
Rectified Output Current
@Tc=100°C
I(AV)
8.0
Peak Forward Surge Current 8.3ms single
Half Sine-Wave Super Imposed on Rated Load
IFSM
200
(JEDEC Method)
Maximum Instantanous Forward Voltage Drop
per Element at 4.0A
VF
1.0
Maximum Reverse Leakage Current @TJ=25°C
10
IR
At Rate DC Blocking Voltage
@TJ=100°C
300
Typical Junction Capacitance Per Element (Note1) CJ
250
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
-55 to +125
-55 to +150
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Company reserves the right to improve product design , functions and reliability without notice.
KBU
808-G
800
560
800
KBU
Unit
810-G
1000
V
700
V
1000
V
A
A
V
μA
pF
°C
°C
QW-BBR79
Comchip Technology CO., LTD.
REV: A
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