KBU600-G Datasheet, PDF (1/2 Pages) Comchip Technology – Silicon Bridge Rectifiers

Silicon Bridge Rectifiers
KBU600-G thru 610-G (RoHS Device)
Reverse Voltage: 50 ~ 1000 Volts
Forward Current: 6.0 Amp
Features:
Diffused Junction
A
B
Low Forward Voltage Drop
High Current Capability
KL
__ _+
High Reliability
High Surge Current Capability
J
Ideal for Printed Circuit Boards
C
E
G
Mechanical Data:
Case: Molded Plastic
Terminals: Plated Leads Solderable per MIL
STD-202, Method 208
Weight: 1.7 grams (approx.)
Mounting Position: Any
Marking: Type Number
H
M
N
P
D
KBU
Dim Min Max
A 22.7 23.70
B 3.80 4.10
C 4.20 4.70
D 1.70 2.20
E 10.30 11.30
G 4.50 6.80
H 4.60 5.60
J 25.40 -
K
- 19.30
L 16.80 17.80
M 6.60 7.10
N 4.70 5.20
P 1.20 1.30
All Dimensions in mm
CHARACTERISTICS
Symbol
KBU
600-G
KBU
601-G
KBU
602-G
KBU
604-G
KBU
606-G
KBU
608-G
KBU
610-G
UNIT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
V_RRM
V_{RWM 50}
DC Blocking Voltage
V_R
RMS Reverse Voltage
V_{R(RMS) 35}
Average Rectified Output Current @ T_A = 100ºC
I_O
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half Sine-Wave Superimposed on rated load
(JEDEC Method)
I_FSM
Forward Voltage (per element) @ I_F=3.0A
V_FM
Peak Reverse Current
@T_C=25ºC
At Rated DC Blocking Voltage @T_C=100ºC
I_R
Rating for Fusing (t<8.3ms) (Note1)
I²t
Typical Thermal Resistance (Note2)
R_θJC
Operating and Storage Temperature Range
T_j T_STG
100 200 400 600 800 1000
V
70 140 280 420 560 700
V
6.0
A
250
A
1.0
V
10
uA
1.0
mA
166
A²S
4.2
K/W
-65 to +150
ºC
Note:
1. Non-repetitive for t>1ms and <8.3ms.
2. Thermal resistance junction to ambient mounted on PC board with 13.0x13.0x0.03mm thick land areas.
“-G” suffix designated RoHS compliant version
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