KBP200-G Datasheet, PDF (1/3 Pages) Comchip Technology – Silicon Bridge Rectifiers

Silicon Bridge Rectifiers
KBP200-G thru 2010-G (RoHS Device)
Reverse Voltage: 50 ~ 1000 Volts
Forward Current: 2.0 Amp
Features:
Diffused Junction
Low Forward Voltage Drop
A
High Reliability
High Current Capability
B
+~~-
High Surge Current Capability
Ideal for Printed Circuit Boards
Mechanical Data:
Case: Molded Plastic
Terminals: Plated Leads Solderable Per MIL
STD-202, Method 208
Weight: 1.7 grams (approx.)
Mounting position: Any
J
D
E
I
KBP
C
KBP
Dim
Min.
Max
A
14.22 15.24
H
B
10.67 11.68
C
11.68 12.70
D
4.57
5.08
E
3.60
4.10
G
2.16
2.67
H
12.70
-
G
J
I
0.76
0.88
1.52
All Dimension in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate currently by 20%.
Characteristics
Symbol
KBP
200-G
Peak Repetitive Reverse Voltage
V_RRM
Working Peak Reverse Voltage
V_{RWM 50}
DC Blocking Voltage
V_R
RMS Reverse Voltage
V_R(RMS) 35
Average Rectified Output Current (Note1) @ T_A = 50ºC
I_o
Non-Repetitive Peak Forward Surge Current 8.3ms Single
half-sine-wave superimposed on rated load (JEDEC
I_FSM
Method)
KBP
201-G
100
70
KBP
202-G
200
140
KBP KBP KBP KBP
204-G 206-G 208-G 2010-G
400 600 800 1000
280 420 560 700
2.0
60
UNIT
V
V
A
A
Forward Voltage (per element) @ I_F=2.0A
V_FM
1.1
V
Peak Reverse Current @ T_A=25ºC
At Rated DC Blocking Voltage @ T_A=100ºC
I_RM
10
uA
500
Rating for Fusing (t<8.3ms)
I²t
15
A2S
Typical Thermal Resistance (Note3)
RθJA
30
K/W
Operating and Storage Temperature Range
T_J, T_STG
-55 to +160
ºC
Typical Junction Capacitance per element (Note2)
C_J
25
pF
Note:
1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance junction to ambient mounted on PC board with 12mm² copper pad.
“-G” suffix designated RoHS compliant version
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