D882M-G Datasheet, PDF (1/4 Pages) Comchip Technology – General Purpose Transistors

General Purpose Transistors
D882M-G
RoHS Device
Features
- Power Dissipation
- High collector current.
- High current gain.
- Low collector-emitter saturation voltage.
Diagram
- 1. BASE
- 2. COLLECTOR
- 3. EMITTER
2
C
1
B
E
3
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol Value Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
6
V
Collector current-continuous
IC
3
A
Collector power dissipation
PC
Junction temperature range
TJ
1.25
W
150
°C
Storage temperature range TSTG
-55 to +150 °C
TO-252-2L
0.264(6.70)
0.256(6.50)
0.215(5.46)
0.202(5.13)
0.409(10.40)
0.386( 9.80)
0.055(1.40)
Φ
0.031(0.80)
0.051(1.30)
0.043(1.10)
1
2
3
0.070(1.78)
REF.
0.190(4.83 )
REF.
0.090(2.29)
Typ.
0.186(4.73)
0.170(4.33)
0.032(0.81)
0.028(0.71)
0.094(2.38)
0.087(2.20)
0.022(0.56)
0.018(0.46)
0.004(0.10)
MAX.
0.244(6.20)
0.236(6.00)
0.067(1.70)
0.055(1.40)
0.114(2.90)
REF.
0.022(0.56)
0.018(0.46)
Dimensions in inches and (millimeters)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Collector-base breakdown voltage
V(BR)CBO IC = 100μA, IE = 0
Collector-emitter breakdown voltage
V(BR)CEO IC = 10mA, IB = 0
Emitter-base breakdown voltage
V(BR)EBO IE = 100μA, IC = 0
Collector cut-off current
ICBO
VCB = 40V, IE = 0
Collector cut-off current
ICEO
VCE = 30V, IB = 0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
hFE
VCE(sat)
VEB = 6V, IC = 0
VCE = 2V, IC = 1A
IC = 2A, IB = 0.2A
Base-emitter saturation voltage
VBE(sat) IC = 2A, IB = 0.2A
Transition frequency
fT
VCE = 5V, IC = 0.1A, f = 10MHz
Min
Typ
Max Unit
40
V
30
V
6
V
1
μA
10
μA
1
μA
100
200
0.5
V
1.5
V
90
MHz
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR51
Comchip Technology CO., LTD.
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