CURM101-G_12 Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Ultra Fast Recovery Rectifiers

SMD Ultra Fast Recovery Rectifiers
CURM101-G Thru. CURM107-G
Reverse Voltage: 50 - 1000 Volts
Forward Current: 1.0 Amp
RoHS Device
Features
-Ideal for surface mount applications
-Easy pick and place
-Plastic package has Underwriters Lab.
flammability classification 94V-0
-Exceeds environmental standard MIL-S-19500/228
-Low leakage current
Mini SMA
0.154(3.9)
0.138(3.5)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
Mechanical data
-Case: Mini SMA/SOD-123 molded plastic
-Terminals: solderable per MIL-STD-750
, method 2026
-Polarity: Indicated by cathode band
-Mounting position: Any
-Approx. Weight: 0.04 grams
0.028(0.7) Typ.
0.067(1.7)
0.051(1.3)
0.028(0.7) Typ.
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characterics
Parameter
Symbol ^{CURM CURM CURM CURM CURM CURM CURM} Unit
101-G 102-G 103-G 104-G 105-G 106-G 107-G
Repetitive Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Continuous reverse voltage
VR
50
100
200
400
600
800
1000
V
RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Max. Forward Surge Current
8.3ms single half sine-wave
superimposed on rate load
IFSM
30
A
( JEDEC method )
Max. Forward rectified Current
Io
1.0
A
Max. Forward voltage at IF=1.0A
VF
1.0
1.3
1.7
V
Max. Reverse recovery time (Note 1)
Trr
50
75
Max.
VR=VRRM, TJ=25°C
IR
5.0
Reverse Current _{VR=VRRM, TJ=100°C IR}
150
TYP. Thermal Resistance (Note 1)
TYP. Diode Junction Capacitance
(F=1MHz and applied 4V DC reverse voltage)
Operating Junction Temperature
Storage Temperature
RΘJA
CJ
TJ
TSTG
42
20
-55 to +150
-65 to +175
Note 1: Reverse recovery time test Condition, IF=0.5A , IR=1.0A , IRR=0.25A
QW-BU007
nS
µA
°C/W
pF
°C
°C
REV:B
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