CSFM101-G_12 Datasheet, PDF (1/4 Pages) Comchip Technology – SMD Super Fast Recovery Rectifiers

SMD Super Fast Recovery Rectifiers
CSFM101-G Thru. CSFM105-G
Reverse Voltage: 50 to 600 Volts
Forward Current: 1.0 Amp
RoHS Device
Features
-Batch process design,excellent power dissipation
offers better reverse leakage current and thermal
resistance.
-Low profile surface mounted application in order
to optimize board space.
-Tiny plastic SMD package.
-Super fast recovery time for switching mode application.
-High current capability.
-High surge current capability.
-Glass passivated chip junction.
Mechanical data
-Epoxy: UL 94-V0 rated flame retardant.
-Case: Molded plastic, JEDEC SOD-123/Mini SMA.
-Terminals: Solderable per MIL-STD-750, method
2026.
-Polarity: Indicated by cathode band.
-Weight: 0.018 grams approx.
Mini SMA / SOD-123
0.154(3.90)
0.138(3.50)
0.012(0.30) Typ.
0.075(1.9)
0.059(1.5)
0.028(0.7) Typ.
0.067(1.7)
0.051(1.3)
0.028(0.70) Typ.
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol ^CSFM
101-G
Repetitive peak reverse voltage
VRRM
50
Continuous reverse voltage
VDC
50
RMS voltage
VRMS
35
Max. forward rectified current Ambient temperature=50°C IO
Maximum Instantaneous forward
voltage at IF=1.0A
VF
Forward surge current
8.3ms single half sine-wave
superimposed on rated
IFSM
load (JEDEC method)
Max. Reverse recovery time
IF=0.5A , IR=1.0A
Trr
IRR=0.25A
Max.Reverse current
VR=VRRM TJ=@25°C
IR
VR=VRRM TJ=@100°C
Typ. Thermal resistance
Junction to ambient
RθJA
Diode junction capacitance
f=1MHZ and applied 4V DC
reverse voltage
CJ
Operating junction temperature
TJ
Storage temperature range
TSTG
CSFM
102-G
100
100
70
CSFM
103-G
200
200
140
1.0
CSFM
104-G
400
400
280
0.95
1.25
25
35
5.0
100
42
10
-55 to +150
-65 to +175
CSFM
105-G
600
Unit
V
600
V
420
V
A
1.70
V
A
nS
μA
°C/W
pF
°C
°C
QW-BS005
Comchip Technology CO., LTD.
REV:C
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