CPDZ5V0C-HF Datasheet, PDF (1/4 Pages) Comchip Technology – SMD ESD Protection Diode

SMD ESD Protection Diode
CPDZ5V0C-HF
RoHS Device
Halogen Free
Features
- Bi-directional ESD protection.
- IEC61000-4-2 Level 4 ESD protection.
- Surface mount package.
- Ultra small SMD package:0201
- High component density.
- Low clamping voltage.
- Low leakage.
Mechanical data
- Case: 0201/DFN0603 package,
molded plastic.
- Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
- Polarity: Color band denotes cathode end.
- Mounting position: Any
Circuit diagram
0201/DFN0603
0.015(0.37)
0.011(0.27)
0.026(0.67)
0.022(0.57)
0.013(0.340)
0.011(0.275)
0.001(0.03)
REF.
0.017(0.435)
0.014(0.365)
0.002(0.05)
REF.
0.012(0.295)
0.009(0.225)
0.008(0.195)
0.005(0.125)
0.008(0.195)
0.005(0.125)
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25°C unless otherwise noted)
Parameter
Conditions
Peak pulse power
TP = 8/20us
Peak pulse current
TP = 8/20us
ESD capability
IEC 61000-4-2(air)
IEC 61000-4-2(contact)
Operation temperature range
Storage temperature range
Symbol
PPP
IPP
ESD
Tj
TSTG
Value
30
2
±15
±8
-40~+125
-55~+150
Unit
W
A
kV
°C
°C
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Working peak reverse voltage
VRWM
5
V
Breakdown voltage
IT = 1mA
VBR
5.5
9.5
V
Reverse leakage current
Clamping voltage
Junction capacitance
VRWM = 5V
IPP = 1A, TP = 8/20us
IPP = 2A, TP = 8/20us
VR = 0V, f = 1MHz
IR
100 nA
12
VC
V
15
CJ
3
pF
Company reserves the right to improve product design , functions and reliability without notice.
QW-JP043
Comchip Technology CO., LTD.
REV:B
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