CPDV5-3V3UP Datasheet, PDF (1/4 Pages) Comchip Technology – SMD ESD Protection Diode

SMD ESD Protection Diode
CPDV5-3V3UP
RoHS Device
Features
IEC61000-4-2 (ESD)±15kV(Contact),±20kV(Air).
Working voltage: 3.3V
Low leakage current.
Low operating and clamping voltages.
Mechanical data
Case: SOT-353 standard package ,molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Mounting position: Any
Weight: 0.0070 gram (approx.).
Circuit Diagram
5
4
SMD Diodes Specialist
SOT-353
0.053(1.35)
0.045(1.15)
0.087(2.20)
0.079(2.00)
0.039(1.00)
0.035(0.90)
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.096(2.45)
0.085(2.15)
0.014(0.35)
0.006(0.15)
0.004(0.10)max
0.010(0.26)
123
Dimensions in inches and (millimeter)
Maximum
Rating
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Peak pulse power ( tp = 8/20 us)
Peak pulse current ( tp = 8/20 us)
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
Operating temperature
Storage temperature
Symbol
PPP
IPP
VESD
Tj
TSTG
Value
40
5
±20
±15
-55 to +125
-55 to +125
Unit
W
A
kV
O
C
O
C
Electrical
Characteristics
(at
O
TA=25 C
unless
otherwise
noted)
Parameter
Reverse stand-off voltage
Punch-through voltage
Snap-back voltage
Reverse leakage current
Clamping voltage
Reverse clamping voltage
Junction capacitance
Conditions
IPT = 2uA
ISB = 50mA
VRWM = 3.3V
IPP = 1 A, tp=8/20us
IPP = 5 A, tp=8/20us
IPPR = 1 A, tp=8/20us
VR = 0 V, f = 1MHz
Symbol _Min Typ _{Max Unit}
VRWM
3.3
V
VPT
3.5
V
VSB
2.8
V
IR
0.05 0.5 uA
VC
5.5
V
VC
8.0
V
VCR
2.4
V
Cj
12 16
pF
QW-BP025
Comchip Technology CO., LTD.
REV:B
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