CPDUR5V0HE-HF Datasheet, PDF (1/4 Pages) Comchip Technology – SMD ESD Protection Diode

SMD ESD Protection Diode
CPDUR5V0HE-HF
RoHS Device
Halogen Free
Features
- Bi-directional ESD protection
- IEC 61000-4-5 (surge) ; IPP=8A
- IEC 61000-4-2 (ESD) ; ±30KV(contact)
- Low clamping voltage
- Low leakage current
- High surge current
Mechanical data
- Case: 0603/SOD-523F Standard package,
molded plastic.
- Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
- Mounting position: Any.
- Weight: 0.003 grams(approx.).
Circuit Diagram
0603/SOD-523F
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
0.020(0.50)
0.016(0.40)
0.033(0.85)
0.027(0.70)
0.030(0.75)
0.026(0.65)
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25°C unless otherwise noted)
Parameter
Conditions
Peak pulse power
TP = 8/20us
Peak pulse current
ESD capability
TP = 8/20us
IEC 61000-4-2(air)
IEC 61000-4-2(contact)
Operation temperature range
Storage temperature range
Symbol
PPP
IPP
ESD
Tj
TSTG
Value
128
8
±30
-40~+125
-55~+150
Unit
W
A
kV
°C
°C
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Working peak reverse voltage
VRWM
5
V
Breakdown voltage
IT = 1mA
VBR
5.5
7.0
V
Reverse leakage current
Clamping voltage
Junction capacitance
VRWM = 5V
IPP = 1A, TP = 8/20us
IPP = 8A, TP = 8/20us
VR = 0V, f = 1MHz
IR
0.1
1.0
uA
11
VC
V
16
CJ
15
20
pF
Company reserves the right to improve product design , functions and reliability without notice.
QW-G7092
Comchip Technology CO., LTD.
REV:A
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